The course is organized around special problems to be solved by the participants. Where appropriate lectures on the fundamentals will be given. External lectures by experts in the field are foreseen and are part of the course. The participants of the course report on their results in regular meetings with all other participants.
Some of the projects may involve experimental work using the equipment available at EMI. An intriductory lecture on the respective equipment will then be given.
The aim of the course is to present to participants recent advances in the field of microwave techniques and electronics including terahertz electronics. The course will enable the participants to evaluate current limitations in device and circuit performance and to analyze theoretically and experimentally advanced large-signal and small-signal circuits operating up to terahertz frequencies. The participants of the course will be introduced into advanced circuit analysis methods for passive and active devices based on nonlinear circuit analysis and electromagnetic simulations. Finally, the participants will improve their presentation skills by preparing reports, giving presentations, preparing posters and discussing scientific results.
Læringsmål:
En studerende, der fuldt ud har opfyldt kursets mål, vil kunne:
Analyze device semiconductor models in Si and III-V technologies
Extract model parameters of modern microwave devices
Develop and/or refine large-signal and thermal device models
Develop equivalent circuit models for circuit discontinuities using electromagnetic simulation
Design low-noise and power MMIC circuits
Analyze nonlinear circuits using harmonic-balance and analytical techniques
Prepare reports of state-of-the-art in relevant scientific areas
Use de-embedding techniques for electromagnetic simulations
Kursusindhold:
The content of the course is covering the following areas: nonlinear circuit analysis, methods for passive and active devices, large-signal and small-signal device modelling, devices and circuits based on meta-materials, nano-structure devices, microwave monolithic integrated circuit design and characterisation, mixed-mode circuits, large-signal operation of amplifiers, oscillators, mixers, component design for millimeter-wave and terahertz systems.
Litteratur:
Helpful but not mandatory literature is: 1. G. Gonzalez, Microwave Transistor Amplifiers, Analysis and Design, 2nd Edition, Prentice-Hall, 1997. 2. S. Maas, Nonlinear Microwave and RF circuits, Artech House, 2nd Edition 3. K. Lee, M. Shur, T. A. Fjedly, T. Ytterdal, Semiconductor Device Modelling for VLSI, Prentice-Hall, 1993. 4. M. Reisch, High Frequency Bipolar Transistors, Springer, 2003.
Further material will be provided in Form of scientific articles and monographs.
